Low-temperature performance of ultimate Si-based MOSFETs

被引：0

作者：

Jomaah, J ^{[1
]}

Ghibaudo, G ^{[1
]}

Cristoloveanu, S ^{[1
]}

Vandooren, A ^{[1
]}

Dieudonné, F ^{[1
]}

Pretet, J ^{[1
]}

Lime, F ^{[1
]}

Oshima, K ^{[1
]}

Guillaumot, B ^{[1
]}

Balestra, F ^{[1
]}

机构：

[1] IMEP, F-38016 Grenoble, France

来源：

LOW TEMPERATURE ELECTRONICS AND LOW TEMPERATURE COFIRED CERAMIC BASED ELECTRONIC DEVICES | 2004年 / 2003卷 / 27期

关键词：

D O I：

暂无

中图分类号：

O414.1 [热力学];

学科分类号：

摘要：

Experimental results for low and high temperature operation are presented for advanced bulk-Si and fully-depleted SOI (FDSOI) MOSFETs with mid-gap metal gate and high-k gate dielectric. The results are rather similar to those previously obtained in more classical SOI devices in terms of threshold voltage, swing, transconductance or mobility. Moreover, the effective mobility of HfO2 n- and p-MOSFETs fabricated on bulk Si has been investigated using low-temperature measurements and constant-voltage stress. It was found that Coulomb scattering mechanism has a significant influence on mobility degradation. A correlation between trapped charge and mobility degradation has been made, which can explain the difference observed in mobility behavior in HfO2 nMOS and pMOS as compared to SiO2 devices.

引用

页码：118 / 128

页数：11

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