Novel Si-based nanowire devices: Will they serve ultimate MOSFETs scaling or ultimate hybrid integration?

被引：0

作者：

Ernst, T. ^{[1
]}

Duraffourg, L. ^{[1
]}

Dupre, C. ^{[1
]}

Bernard, E. ^{[1
]}

Andreucci, P. ^{[1
]}

Becu, S. ^{[1
]}

Ollier, E. ^{[1
]}

Hubert, A. ^{[1
]}

Halte, C. ^{[1
]}

Buckley, J. ^{[1
]}

Thomas, O. ^{[1
]}

Delapierre, G. ^{[1
]}

Deleonibus, S. ^{[1
]}

de Salvo, B. ^{[1
]}

Robert, P. ^{[1
]}

Faynot, O. ^{[1
]}

机构：

[1] Minatec, CEA LETI, F-38054 Grenoble 9, France

来源：

IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2008, TECHNICAL DIGEST | 2008年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

下载

页码：745 / 748

页数：4

共 18 条

[1] Low-temperature performance of ultimate Si-based MOSFETs
Jomaah, J
Ghibaudo, G
Cristoloveanu, S
Vandooren, A
Dieudonné, F
Pretet, J
Lime, F
Oshima, K
Guillaumot, B
Balestra, F
LOW TEMPERATURE ELECTRONICS AND LOW TEMPERATURE COFIRED CERAMIC BASED ELECTRONIC DEVICES, 2004, 2003 (27): : 118 - 128
[2] Demonstration of Ge Nanowire CMOS Devices and Circuits for Ultimate Scaling
Wu, Heng
Wu, Wangran
Si, Mengwei
Ye, Peide D.
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2016, 63 (08) : 3049 - 3057
[3] Vertical nanowire array-based field effect transistors for ultimate scaling
Larrieu, G.
Han, X. -L.
NANOSCALE, 2013, 5 (06) : 2437 - 2441
[4] Monte Carlo Study of Ultimate Channel Scaling in Si and In0.3Ga0.7As Bulk MOSFETs
Islam, Aynul
Benbakhti, Brahim
Kalna, Karol
IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2011, 10 (06) : 1424 - 1432
[5] Biosensor integration on Si-based devices: Feasibility studies and examples
Libertino, S.
Conoci, S.
Scandurra, A.
Spinella, C.
SENSORS AND ACTUATORS B-CHEMICAL, 2013, 179 : 240 - 251
[6] Nanowire Array-based MOSFET for Future CMOS Technology to Attain the Ultimate Scaling Limit
Krutideepa Bhol
Umakanta Nanda
Silicon, 2022, 14 : 1169 - 1177
[7] Nanowire Array-based MOSFET for Future CMOS Technology to Attain the Ultimate Scaling Limit
Bhol, Krutideepa
Nanda, Umakanta
SILICON, 2022, 14 (03) : 1169 - 1177
[8] Shaping the transition from Si-based power devices to SiC MOSFETs and GaN HEMTs
Deboy, Gerald
2022 24TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE'22 ECCE EUROPE), 2022,
[9] NOVEL DEVICES BY SI-BASED MOLECULAR-BEAM EPITAXY
WANG, KL
SOLID STATE TECHNOLOGY, 1985, 28 (10) : 137 - 143
[10] A Novel Si-based X'tal Oscillator Device Using 3D Integration Technologies
Shih, Jian-Yu
Chen, Yen-Chi
Chiu, Chih-Hung
Lo, Chung-Lun
Chen, Kuan-Neng
PROCEEDINGS OF TECHNICAL PROGRAM - 2014 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA), 2014,

← 1 2 →