The effect of potassium-doped MgO films on discharge characteristics in AC-plasma display panel

被引:2
|
作者
Ahn, Sung Il [1 ]
Ryu, Si Hong
Lee, Seong Eui
Moon, Sung Hwan
Choi, Kyung Cheol
机构
[1] Korea Polytech Univ, Dept Adv Mat Engn, Shihung 429793, South Korea
[2] Seoul Natl Univ, Sch Mat Sci & Engn, Seoul 151742, South Korea
[3] Korea Adv Inst Sci & Technol, Dept Elect Engn & Comp Sci, Taejon 305701, South Korea
关键词
MgO; ac-PDP; secondary electron emission; memory margin; K+ doping;
D O I
10.1143/JJAP.46.3579
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this paper, we investigate how various concentrations of potassium-doped MgO films affect the discharge characteristics in ac-type plasma display panel. The firing voltages of ion-doped MgO films indicate that the potassium ions in MgO film clearly produce a low discharge voltage. The static memory margin of a test panel decreases as the concentration of potassium ions increases. The X-ray photoelectron spectroscopy results, which confirm that the potassium doping creates donor energy levels in the band gap of MgO, agree well with the varied behavior of secondary electron emission yields in various K+-doped MgO films.
引用
收藏
页码:3579 / 3582
页数:4
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