Effect of electron emission on an ion sheath structure

被引:2
|
作者
Mishra, M. K. [1 ]
Phukan, A. [2 ]
Chakraborty, M. [3 ]
机构
[1] Baosi Banikanta Kakati Coll, Dept Phys, Barpeta 781311, Assam, India
[2] Madhabdev Coll, Dept Phys, Lakhimpur 784164, Assam, India
[3] Inst Plasma Res, Ctr Plasma Phys, Sonapur 782402, Assam, India
关键词
sheath; hot electrons; cold electrons; DOUBLE PLASMA-DEVICE; DISCHARGE PLASMA; PARAMETERS; CONFINEMENT; INJECTION; VOLTAGE; BEAM;
D O I
10.1088/0031-8949/89/9/095602
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
This article reports on the variations of ion sheath structures due to the emission of both hot and cold electrons in the target plasma region of a double plasma device. The ion sheath is produced in front of a negatively biased plate. The plasma is produced by hot filament discharge in the source region, and no discharge is created in the target region of the device. The plate is placed in the target (diffused plasma) region where cold electron emitting filaments are present. These cold electrons are free from maintenance of discharge, which is sustained in the source region. The hot ionizing electrons are present in the source region. Three important parameters are changed by both hot and cold electrons i. e. plasma density, plasma potential and electron temperature. The decrease in plasma potential and the increase in plasma density lead to the contraction of the sheath.
引用
收藏
页数:5
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