Graded AlGaN Channel Transistors for Improved Current and Power Gain Linearity

被引：65

作者：

Bajaj, Sanyam ^{[1
]}

Yang, Zhichao ^{[1
]}

Akyol, Fatih ^{[1
]}

Park, Pil Sung ^{[2
]}

Zhang, Yuewei ^{[1
]}

Price, Aimee L. ^{[1
]}

Krishnamoorthy, Sriram ^{[1
]}

Meyer, David J. ^{[3
]}

Rajan, Siddharth ^{[1
]}

机构：

[1] Ohio State Univ, Dept Elect & Comp Engn, Columbus, OH 43210 USA

[2] Navitas Semicond, El Segundo, CA 90245 USA

[3] Naval Res Lab, Washington, DC 20375 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2017年 / 64卷 / 08期

基金：

美国国家科学基金会;

关键词：

Graded AlGaN; constant f(T); gain linearity; GaN; graded AlGaN; high-electron-mobility transistor (HEMT); polarization-doped field-effect transistor (PolFET); ELECTRON-MOBILITY TRANSISTORS; MOLECULAR-BEAM EPITAXY; OHMIC CONTACTS; HEMTS; F(T);

D O I：

10.1109/TED.2017.2713784

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the small-signal high frequency characteristics of highly scaled graded AlGaN channel polarization-doped field-effect transistors (PolFETs) that show constant current gain cutoff frequency (f(T)) and maximum oscillation frequency (f(max)) profiles as a function of current density or gate bias. The device design includes upward and downward Al composition grading to induce a distributed 3-D charge profile, and eliminate abrupt heterojunction band offsets to achieve nonalloyedohmic contacts with low resistance. The highest extrinsic f(T) of 52 GHz and fmax of 67 GHz weremeasured at V-GS = -1.5 V andVDS = 9 V, and constant fT and fmax over wide input voltage (VGS) and output current range (IDS) were achieved.

引用

页码：3114 / 3119

页数：6

共 50 条

[21] HIGH-LEVEL CURRENT GAIN IN BIPOLAR POWER TRANSISTORS
OLMSTEAD, J
EINTHOVEN, W
PONCZAK, S
KANNAM, PJ
RCA REVIEW, 1971, 32 (02): : 221 - +
[22] High current gain silicon carbide bipolar power transistors
Domeij, Martin
Lee, Hyung-Seok
Zetterling, Carl-Mikael
Ostling, Mikael
Schoner, Adolf
PROCEEDINGS OF THE 18TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 2006, : 141 - +
[23] Impact of Graded AlGaN Buffer Layer Thickness on the DC, RF, Linearity, Intermodulation and Off-State Breakdown Characteristics of AlGaN Channel HEMT
Anand, Anupama
Narang, Rakhi
Rawal, Dipendra Singh
Mishra, Meena
Saxena, Manoj
Gupta, Mridula
IETE TECHNICAL REVIEW, 2024, 41 (05) : 602 - 611
[24] AlN/GaN/InGaN Coupling-Channel HEMTs for Improved gm and Gain Linearity
Lu, Hao
Hou, Bin
Yang, Ling
Niu, Xuerui
Si, Zeyan
Zhang, Meng
Wu, Mei
Mi, Minhan
Zhu, Qing
Cheng, Kai
Ma, Xiaohua
Hao, Yue
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021, 68 (07) : 3308 - 3313
[25] CURRENT GAIN ROLLOFF IN GRADED-BASE SIGE HETEROJUNCTION BIPOLAR-TRANSISTORS
CRABBE, EF
CRESSLER, JD
PATTON, GL
STORK, JMC
COMFORT, JH
SUN, JYC
IEEE ELECTRON DEVICE LETTERS, 1993, 14 (04) : 193 - 195
[26] Effect of Longitudinal Electric Field and Self Heating of Channel on Linearity and Gain of AlGaN/GaN HEMT on Sapphire (0001)
Bag, Ankush
Mukhopadhyay, Partha
Ghosh, Saptarsi
Kumar, Rahul
Dinara, Syed Mukulika
Kabi, Sanjib
Chakraborty, Apurba
Biswas, Dhrubes
2014 IEEE STUDENTS' TECHNOLOGY SYMPOSIUM (IEEE TECHSYM), 2014, : 393 - 395
[27] AlGaN/GaN Heterojunction Bipolar Transistors With High Current Gain and Low Specific On-Resistance
Zhang, Lian
Wang, Xinyuan
Zeng, Jianping
Jia, Lifang
Cheng, Zhe
Ai, Yujie
Liu, Zhe
Tan, Wei
Zhang, Yun
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022, 69 (12) : 6633 - 6636
[28] AlGaN/GaN transistors for power electronics
Mishra, Umesh K.
2010 INTERNATIONAL ELECTRON DEVICES MEETING - TECHNICAL DIGEST, 2010,
[29] Evaluation of Power and Linearity at 30 GHz in AlGaN/GaN HEMT Fabricated by Integrating Transistors With Multiple Threshold Voltages
Wang, Pengfei
Mi, Minhan
An, Sirui
Du, Xiang
Zhou, Yuwei
Gong, Can
Chen, Yilin
Zhu, Qing
Zhang, Meng
Zhou, Jiuding
Guo, Jingshu
Zhao, Ziyue
Ma, Xiaohua
Hao, Yue
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2024, 71 (03) : 1421 - 1427
[30] SIMPLE METHOD FOR INCREASING CURRENT GAIN AND VOLTAGE RATINGS OF POWER TRANSISTORS
SILARD, A
FLORU, F
STEFAN, C
NANI, G
ELECTRONICS LETTERS, 1987, 23 (23) : 1213 - 1214

← 1 2 3 4 5 →