Graded AlGaN Channel Transistors for Improved Current and Power Gain Linearity

被引：65

作者：

Bajaj, Sanyam ^{[1
]}

Yang, Zhichao ^{[1
]}

Akyol, Fatih ^{[1
]}

Park, Pil Sung ^{[2
]}

Zhang, Yuewei ^{[1
]}

Price, Aimee L. ^{[1
]}

Krishnamoorthy, Sriram ^{[1
]}

Meyer, David J. ^{[3
]}

Rajan, Siddharth ^{[1
]}

机构：

[1] Ohio State Univ, Dept Elect & Comp Engn, Columbus, OH 43210 USA

[2] Navitas Semicond, El Segundo, CA 90245 USA

[3] Naval Res Lab, Washington, DC 20375 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2017年 / 64卷 / 08期

基金：

美国国家科学基金会;

关键词：

Graded AlGaN; constant f(T); gain linearity; GaN; graded AlGaN; high-electron-mobility transistor (HEMT); polarization-doped field-effect transistor (PolFET); ELECTRON-MOBILITY TRANSISTORS; MOLECULAR-BEAM EPITAXY; OHMIC CONTACTS; HEMTS; F(T);

D O I：

10.1109/TED.2017.2713784

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the small-signal high frequency characteristics of highly scaled graded AlGaN channel polarization-doped field-effect transistors (PolFETs) that show constant current gain cutoff frequency (f(T)) and maximum oscillation frequency (f(max)) profiles as a function of current density or gate bias. The device design includes upward and downward Al composition grading to induce a distributed 3-D charge profile, and eliminate abrupt heterojunction band offsets to achieve nonalloyedohmic contacts with low resistance. The highest extrinsic f(T) of 52 GHz and fmax of 67 GHz weremeasured at V-GS = -1.5 V andVDS = 9 V, and constant fT and fmax over wide input voltage (VGS) and output current range (IDS) were achieved.

引用

页码：3114 / 3119

页数：6

共 50 条

[1] X-Band Power and Linearity Performance of Compositionally Graded AlGaN Channel Transistors
Sohel, Shahadat H.
Xie, Andy
Beam, Edward
Xue, Hao
Roussos, Jason A.
Razzak, Towhidur
Bajaj, Sanyam
Cao, Yu
Meyer, David J.
Lu, Wu
Rajan, Siddharth
IEEE ELECTRON DEVICE LETTERS, 2018, 39 (12) : 1884 - 1887
[2] Improved DC-RF dispersion with epitaxial passivation for high linearity graded AlGaN channel field effect transistors
Sohel, Shahadat H.
Xie, Andy
Beam, Edward
Xue, Hao
Razzak, Towhidur
Bajaj, Sanyam
Campbell, Sherry
White, Donald
Wills, Kenneth
Cao, Yu
Lu, Wu
Rajan, Siddharth
APPLIED PHYSICS EXPRESS, 2020, 13 (03)
[3] Improved current stability in multi-mesa-channel AlGaN/GaN transistors
Asubar, Joel
Ohi, Kota
Nishiguchi, Kenya
Hashizume, Tamotsu
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 3-4, 2014, 11 (3-4): : 857 - 861
[4] AlGaN channel field effect transistors with graded heterostructure ohmic contacts
Bajaj, Sanyam
Akyol, Fatih
Krishnamoorthy, Sriram
Zhang, Yuewei
Rajan, Siddharth
APPLIED PHYSICS LETTERS, 2016, 109 (13)
[5] MEASURING CURRENT GAIN IN POWER TRANSISTORS
SMITH, KW
ELECTRO-TECHNOLOGY, 1967, 79 (02): : 56 - &
[6] GRADED CHANNEL FETS - IMPROVED LINEARITY AND NOISE-FIGURE
WILLIAMS, RE
SHAW, DW
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (06) : 600 - 605
[7] High Current and Linearity AlGaN/GaN/-Graded-AlGaN:Si-doped/GaN Heterostructure for Low Voltage Power Amplifier Application
Yu, Qian
Shi, Chunzhou
Yang, Ling
Lu, Hao
Zhang, Meng
Wu, Mei
Hou, Bin
Jia, Fuchun
Guo, Fei
Ma, Xiaohua
Hao, Yue
IEEE ELECTRON DEVICE LETTERS, 2023, 44 (04) : 582 - 585
[8] Linearity improvement in graded channel AlGaN/GaN HEMTs for high-speed applications
Jena, Devika
Das, Sanghamitra
Baral, Biswajit
Mohapatra, Eleena
Dash, Taraprasanna
PHYSICA SCRIPTA, 2023, 98 (10)
[9] Tuning composition in graded AlGaN channel HEMTs toward improved linearity for low-noise radio-frequency amplifiers
Papamichail, A.
Persson, A. R.
Richter, S.
Kuhne, P.
Stanishev, V.
Persson, P. O. A.
Del Castillo, R. Ferrand-Drake
Thorsell, M.
Hjelmgren, H.
Paskov, P. P.
Rorsman, N.
Darakchieva, V.
APPLIED PHYSICS LETTERS, 2023, 122 (15)
[10] Linearity Analysis of Laterally Graded Channel in RF Power MOSFETs
Chen, Chia-Yu
Tornblad, Olof G.
Dutton, Robert W.
2009 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM, VOLS 1-3, 2009, : 1497 - +

← 1 2 3 4 5 →