Near-band-edge photoluminescence emission in AlxGa1-xN under high pressure

被引：14
|
作者：
Shan, W [1 ]
Ager, JW
Walukiewicz, W
Haller, EE
Little, BD
Song, JJ
Schurman, M
Feng, ZC
Stall, RA
Goldenberg, B
机构：
[1] Lawrence Berkeley Natl Lab, Div Sci Mat, Berkeley, CA 94720 USA
[2] Univ Calif Berkeley, Dept Mat Sci & Mineral Engn, Berkeley, CA 94720 USA
[3] Oklahoma State Univ, Ctr Laser & Photon Res, Stillwater, OK 74078 USA
[4] Oklahoma State Univ, Dept Phys, Stillwater, OK 74078 USA
[5] EMCORE Corp, Somerset, NJ 08873 USA
[6] Honeywell Technol Ctr, Plymouth, MN 55420 USA
来源：
APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 18期
关键词：
D O I：
10.1063/1.121277
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We present results of pressure-dependent photoluminescence (PL) studies of single-crystal AlxGa1-xN epitaxial films grown on sapphire substrates by metalorganic chemical vapor deposition. PL measurements were performed under hydrostatic pressure using the diamond-anvil-cell technique. PL spectra taken from the AlxGa1-xN epitaxial films are dominated by strong near-band-edge luminescence emissions. The emission lines were found to shift linearly towards higher energy with increasing pressure. By examining the pressure dependence of the spectral features, the pressure coefficients for the PL emissions associated with the direct Gamma band gap of AlxGa1-xN were determined. Our results yield a pressure coefficient of 4.0x10(-3) eV/kbar for Al0.05Ga0.95N and 3.6x10(-3) eV/kbar for Al0.35Ga0.65N. (C) 1998 American Institute of Physics.
引用
收藏
页码：2274 / 2276
页数：3
相关论文
共 50 条
  • [1] EDGE EMISSION OF ALXGA1-XN
    KHAN, MRH
    KOIDE, Y
    ITOH, H
    SAWAKI, N
    AKASAKI, I
    SOLID STATE COMMUNICATIONS, 1986, 60 (06) : 509 - 512
  • [2] Study on photoluminescence emission in cubic AlxGa1-xN/GaAs (100)
    Zhao, Degang
    Yang, Hui
    Xu, Dapeng
    Li, Jianbin
    Wang, Yutian
    Zhen, Lianxi
    Li, Shunfeng
    Wang, Qiming
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1999, 20 (08): : 723 - 727
  • [3] Low temperature photoluminescence study of AlxGa1-xN/GaN/AlxGa1-xN heterostructure nanocolumns
    AbdelAll, Naglaa
    ElGhoul, Jaber
    Almokhtar, Mohamed
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2023, 34 (21)
  • [4] ORIGIN OF NEAR-BAND-EDGE PHOTOLUMINESCENCE OF GaAsN
    Inagaki, M.
    Suzuki, H.
    Kojima, N.
    Ohshita, Y.
    Yamaguchi, M.
    35TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, 2010, : 2062 - 2065
  • [5] The energy band gap of AlxGa1-xN
    Paduano, QS
    Weyburne, DW
    Bouthillette, LO
    Wang, SQ
    Alexander, MN
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2002, 41 (4A): : 1936 - 1940
  • [6] BEHAVIOR OF ZN AS DOPANT IN THE PHOTOLUMINESCENCE OF ALXGA1-XN
    KHAN, MRH
    KOIDE, Y
    SAWAKI, N
    AKASAKI, I
    SOLID STATE COMMUNICATIONS, 1986, 57 (01) : 17 - 20
  • [7] EELS study of near edge fine structure in AlxGa1-xN alloys
    Radtke, G
    Bayle-Guillemaud, P
    Thibault, J
    ELECTRON MICROSCOPY AND ANALYSIS 2003, 2004, (179): : 303 - 306
  • [8] Dependence of the fundamental band gap of AlxGa1-xN on alloy composition and pressure
    Shan, W
    Ager, JW
    Yu, KM
    Walukiewicz, W
    Haller, EE
    Martin, MC
    McKinney, WR
    Yang, W
    JOURNAL OF APPLIED PHYSICS, 1999, 85 (12) : 8505 - 8507
  • [9] High degree of polarization of the near-band-edge photoluminescence in ZnO nanowires
    Jacopin, Gwenole
    Rigutti, Lorenzo
    Bugallo, Andres De Luna
    Julien, Francois Henry
    Baratto, Camilla
    Comini, Elisabetta
    Ferroni, Matteo
    Tchernycheva, Maria
    NANOSCALE RESEARCH LETTERS, 2011, 6 : 1 - 6
  • [10] High degree of polarization of the near-band-edge photoluminescence in ZnO nanowires
    Gwenole Jacopin
    Lorenzo Rigutti
    Andres De Luna Bugallo
    François Henry Julien
    Camilla Baratto
    Elisabetta Comini
    Matteo Ferroni
    Maria Tchernycheva
    Nanoscale Research Letters, 6
12345