Chemical vapor deposition of tungsten oxide

被引：0
|
作者：
Kirss, RU [1 ]
Meda, L [1 ]
机构：
[1] Northeastern Univ, Dept Chem, Boston, MA 02115 USA
来源：
APPLIED ORGANOMETALLIC CHEMISTRY | 1998年 / 12卷 / 03期
关键词：
tungsten trioxide; electrochromism; thin films; chemical vapor deposition (CVD);
D O I：
10.1002/(SICI)1099-0739(199803)12:3<155::AID-AOC688>3.0.CO;2-Z
中图分类号：
O69 [应用化学];
学科分类号：
081704 ;
摘要：
Crystalline and amorphous thin films of tungsten(VI) oxide can be prepared by chemical vapor deposition using a variety of volatile precursors below 500 degrees C. Deposition parameters for preparation of WO3 films from tungsten hexacarbonyl [W(CO)(6)], tungsten hexafluoride (WF6), tungsten ethoxides [W(OEt)(x), x=5, 6] and tetra(allyl)tungsten [W(eta(3)-C3H5)(4)] are summarized. The electrochromic behavior of these films is comparable with that observed for WO3 films prepared by evaporation, sputtering and electrodeposition. (C) 1998 John Wiley & Sons, Ltd.
引用
收藏
页码：155 / 160
页数：6
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