Characterizing Drain Current Dispersion in GaN HEMTs with a New Trap Model

被引：0
|
作者：
Albahrani, Sayed A. [1 ]
Rathmell, James G. [2 ]
Parker, Anthony E. [1 ]
机构：
[1] Macquarie Univ, Dept Phys & Engn, Sydney, NSW 2109, Australia
[2] Univ Sydney, Sch Elect Engn, Sydney, NSW 2006, Australia
来源：
2009 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC 2009) | 2009年
关键词：
TRANSISTORS;
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
Dispersion in a GaN HEMT, including gate and drain lag, is related to a new trapping model based on SRH theory. The model is used to explain the bias- and terminal-potential dependency of the turn-on transients and their time constants. Because the time constants are extremely long they impact the measurement of true dc characteristics and contribute to knee walk-out. Temperature as a function of time is shown to be a vital consideration. The models of both drain current and trapping need to consider temperature and power dissipation versus time. The relationship between trap potentials and terminal potentials is investigated.
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收藏
页码：339 / +
页数：2
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