High aspect ratio vertical cantilever RF-MEMS variable capacitor

被引：16
|
作者：
Klymyshyn, David M. [1 ]
Haluzan, Darcy T.
Borner, Martin
Achenbach, Sven
Mohr, Juergen
Mappes, Timo
机构：
[1] Univ Saskatchewan, TRLabs, Saskatoon, SK S7N 5A9, Canada
[2] Univ Saskatchewan, Dept Elect Engn, Saskatoon, SK S7N 5A9, Canada
[3] Inst Microstruct Tech, D-76021 Karlsruhe, Germany
来源：
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2007年 / 17卷 / 02期
基金：
加拿大自然科学与工程研究理事会;
关键词：
capacitors; microelectromechanical devices; micromachining; microwave devices; microwave switches; varactors; X-ray lithography;
D O I：
10.1109/LMWC.2006.890338
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An electrostatically actuated, microwave microelectromechanical system variable capacitor fabricated using deep X-ray lithography is presented. A single exposure has been used to produce the novel high aspect ratio microstructure, which includes a thin, vertically oriented, movable nickel cantilever beam and a 40:1 vertical aspect ratio capacitance gap. The 0.8-pF capacitor operates in the 1-5 GHz region and has Q-factors of 36 at 4 GHz and 133 at 2 GHz. The variable capacitance ratio is 1.24:1 over a 20-V tuning range at 4 GHz.
引用
收藏
页码：127 / 129
页数：3
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