Efficient complementary resistive switch-based crossbar array Booth multiplier

被引:15
|
作者
Bhattacharjee, Debjyoti [1 ]
Siemon, Anne [2 ]
Linn, Eike [2 ]
Chattopadhyay, Anupam [1 ]
机构
[1] Nanyang Technol Univ, Sch Comp Sci & Engn, Singapore, Singapore
[2] Rhein Westfal TH Aachen, Inst fr Werkstoffe Elektrotech IWE 2, Aachen, Germany
来源
MICROELECTRONICS JOURNAL | 2017年 / 64卷
关键词
Booth multiplier; ReRAM; Memristors; In-memory computing; Emerging architectures;
D O I
10.1016/j.mejo.2017.04.010
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Recent advances of memristive devices allow high endurance, non-volatile storage and low leakage power. Thus, these devices are suitable candidates for in-memory computing. Several recent studies explored the usage of memristive crossbar array for approximate and neuromorphic computing, including approximate matrix-vector multiplication. However, accurate digital circuit realization using device-level simulation, accounting for more realistic ReRANI device behavior, is only studied for adder circuits so far. In this paper, we report the first study of a multiplier scheme with complementary resistive switch-based crossbar arrays. An efficient mapping of Booth multiplication algorithm with different area-timing trade-offs, is discussed. Simulation studies are performed using 4-bit numbers to validate our approach.
引用
收藏
页码:78 / 85
页数:8
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