A novel circuit design for complementary resistive switch-based stateful logic operations

被引:4
|
作者
Wang, Xiao-Ping [1 ,2 ]
Chen, Lin [1 ,2 ]
Shen, Yi [1 ,2 ]
Xu, Bo-Wen [1 ,2 ]
机构
[1] Huazhong Univ Sci & Technol, Sch Automat, Wuhan 430074, Peoples R China
[2] Huazhong Univ Sci & Technol Shenzhen, Res Inst, Shenzhen 518000, Peoples R China
基金
中国国家自然科学基金;
关键词
memristor; complementary resistive switch; crossbar arrays; logic circuits; MEMRISTOR; READOUT;
D O I
10.1088/1674-1056/25/5/058502
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Recently, it has been demonstrated that memristors can be utilized as logic operations and memory elements. In this paper, we present a novel circuit design for complementary resistive switch (CRS)-based stateful logic operations. The proposed circuit can automatically write the destructive CRS cells back to the original states. In addition, the circuit can be used in massive passive crossbar arrays which can reduce sneak path current greatly. Moreover, the steps for CRS logic operations using our proposed circuit are reduced compared with previous circuit designs. We validate the effectiveness of our scheme through Hspice simulations on the logic circuits.
引用
收藏
页数:9
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