Photon-stimulated ion desorption from DCOO/Si(100) near the O K-edge

被引:9
|
作者
Sekiguchi, HI [1 ]
Sekiguchi, T [1 ]
机构
[1] JAPAN ATOM ENERGY RES INST, SPRING 8 FACIL, KAMIGORI, HYOGO 67812, JAPAN
关键词
chemisorption; formic acid; near edge X-ray absorption fine structure (NEXAFS); photon-stimulated desorption (PSD); silicon;
D O I
10.1016/S0039-6028(97)00552-9
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Photon-stimulated ion desorption from deuterated formic acid chemisorbed on Si(100) has been studied using pulsed synchrotron radiation in the energy region of the oxygen Is electron excitation. The O Is electrons of hydroxyl oxygen and carbonyl oxygen could be selectively excited in the O K-edge region because the chemical environments are different. It is found that the CDO* yield is enhanced at the O Is(C-O)-->sigma*(C-O) resonance and the CD+ yield at the O Is(C=O)-->sigma*(C-O) resonance. The results indicate that inn desorption is related both to the antibonding character of excited molecular orbitals and the local character of core hole orbitals. (C) 1997 Elsevier Science B.V.
引用
收藏
页码:214 / 218
页数:5
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