Modeling transient diffusion following high energy implantation

被引：4
|
作者：
Rafferty, CS
Gossmann, HJ
Kamgar, A
Jacobson, DC
Lloyd, EJ
Hillenius, SJ
Vuong, HH
Becerro, J
Vaidya, HM
Lytle, SA
Thoma, MJ
Luftman, HS
机构：
来源：
IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996 | 1996年
关键词：
D O I：
10.1109/IEDM.1996.554098
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The increasing use of high energy implantation (HEI) in tub formation, combined with the use of low temperature gate processing, leads to the potential for strong Transient Enhanced Diffusion (TED) effects in the channel profile. We have discovered through simulation and experiment an unexpected saturation of TED broadening in surface profiles. A profiled tub replacement using HEI in a manufacturing 0.5 mu m CMOS flow was designed through simulation.
引用
收藏
页码：791 / 794
页数：4
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