Implantation damage and transient enhanced diffusion modeling

被引：0
|
作者：
Intel Corp, Santa Clara, United States [1 ]
机构：
来源：
Solid State Technol | / 2卷
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] Implantation damage and transient enhanced diffusion modeling
    Giles, MD
    Yu, SF
    Kennel, HW
    Packan, PA
    [J]. SOLID STATE TECHNOLOGY, 1998, 41 (02) : 97 - +
  • [2] Modeling silicon implantation damage and transient enhanced diffusion effects for silicon technology development
    Giles, MD
    Yu, SF
    Kennel, HW
    Packan, PA
    [J]. DEFECTS AND DIFFUSION IN SILICON PROCESSING, 1997, 469 : 253 - 264
  • [3] TRANSIENT ENHANCED DIFFUSION OF DOPANTS IN SILICON INDUCED BY IMPLANTATION DAMAGE
    ANGELUCCI, R
    NEGRINI, P
    SOLMI, S
    [J]. APPLIED PHYSICS LETTERS, 1986, 49 (21) : 1468 - 1470
  • [4] Species and dose dependence of ion implantation damage induced transient enhanced diffusion
    Chao, HS
    Crowder, SW
    Griffin, PB
    Plummer, JD
    [J]. JOURNAL OF APPLIED PHYSICS, 1996, 79 (05) : 2352 - 2363
  • [5] Modeling of diffusion and ion implantation in mercury cadmium telluride: A comparison to transient enhanced diffusion in silicon
    HolanderGleixner, S
    Robinson, HG
    Williams, BL
    Mao, DH
    Yu, JE
    Helms, CR
    [J]. PROCEEDINGS OF THE FOURTH INTERNATIONAL SYMPOSIUM ON PROCESS PHYSICS AND MODELING IN SEMICONDUCTOR TECHNOLOGY, 1996, 96 (04): : 216 - 227
  • [6] Implant damage and transient enhanced diffusion in Si
    Eaglesham, DJ
    Stolk, PA
    Gossmann, HJ
    Haynes, TE
    Poate, JM
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1995, 106 (1-4): : 191 - 197
  • [7] Implantation species dependence of transient enhanced diffusion in silicon
    Uematsu, M
    [J]. JOURNAL OF APPLIED PHYSICS, 1998, 83 (01) : 120 - 125
  • [8] Modeling transient diffusion following high energy implantation
    Rafferty, CS
    Gossmann, HJ
    Kamgar, A
    Jacobson, DC
    Lloyd, EJ
    Hillenius, SJ
    Vuong, HH
    Becerro, J
    Vaidya, HM
    Lytle, SA
    Thoma, MJ
    Luftman, HS
    [J]. IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996, 1996, : 791 - 794
  • [9] TRANSIENT PHOSPHORUS DIFFUSION FROM SILICON AND ARGON IMPLANTATION DAMAGE
    GILES, MD
    [J]. APPLIED PHYSICS LETTERS, 1993, 62 (16) : 1940 - 1942
  • [10] Physical modeling of transient enhanced diffusion in silicon
    Griffin, PB
    Plummer, JD
    [J]. PROCEEDINGS OF THE FOURTH INTERNATIONAL SYMPOSIUM ON PROCESS PHYSICS AND MODELING IN SEMICONDUCTOR TECHNOLOGY, 1996, 96 (04): : 101 - 115
12345