Development of a High-Band Gap High Temperature III-Nitride Solar Cell for Integration with Concentrated Solar Power Technology

被引：0
|
作者：
Williams, Joshua J. [1 ]
McFavilen, Heather [2 ]
Fischer, Alec M. [1 ]
Ding, Ding [2 ]
Young, Steven R. [2 ]
Vadiee, Ehsan [1 ]
Ponce, Fernando A. [1 ]
Arena, Chantal [2 ]
Honsberg, Christiana B. [1 ]
Goodnick, Stephen M. [1 ]
机构：
[1] Arizona State Univ, Tempe, AZ 85287 USA
[2] Photonitride Devices Inc, Tempe, AZ 85284 USA
来源：
2016 IEEE 43RD PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | 2016年
关键词：
INGAN;
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
The III-N material class of semiconductors exhibits desirable properties for construction of a cell for integration with the thermal receiver of a concentrated solar plant. We design a GaN-InGaN based solar cell for operation at 450 degrees C. An MQW structure for the InGaN absorber is selected to improve voltage through improved material quality. Cell performance shows a VOC of 2.4 V for room temperature and 1.7 V at operating temperature and 300x suns. EQE measurements show little cell performance decrease up to 500 degrees C. Repeated measurements indicate the device to be thermally robust.
引用
收藏
页码：193 / 195
页数：3
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