共 50 条
- [44] Free and bound excitonic effects in Al0.5Ga0.5N/Al0.35Ga0.65N MQWs with different Si-doping levels in the well layers SCIENTIFIC REPORTS, 2015, 5
- [47] First-principles study of anisotropic thermal conductivity of GaN, AlN, and Al0.5Ga0.5N MATERIALS PHYSICS AND MECHANICS, 2022, 49 (01): : 97 - 107
- [50] Effect of doping concentration and barrier thickness on Rashba spin splitting in Al0.5Ga0.5N/GaN heterostructures IWCE-13: 2009 13TH INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS, 2009, : 230 - +