Statistical Characterization and Modelling of Gate-Induced Drain Leakage Variability in Advanced FDSOI Devices

被引：0
|
作者：
Karatsori, T. A. [1 ]
Cavalcante, C. [2 ]
Lacord, J. [2 ]
Batude, P. [2 ]
Theodorou, C. [1 ]
Ghibaudo, G. [1 ]
机构：
[1] Univ Grenoble Alpes, Minatec, IMEP LAHC, F-38016 Grenoble, France
[2] Univ Grenoble Alpes, Minatec, CEA LETI, F-38054 Grenoble, France
来源：
2019 IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S) | 2019年
关键词：
GIDL; variability; characterization; modelling; FDSOI;
D O I：
10.1109/S3S46989.2019.9320739
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A detailed statistical characterization of gate-induced drain leakage variability in FDSOI devices is carried out. An analytical model is developed for the drain current variability, covering the on-state and off-state MOSFET operation regions.
引用
收藏
页数：2
相关论文
共 50 条
  • [1] GATE-INDUCED DRAIN LEAKAGE CURRENT IN MOS DEVICES
    NATHAN, V
    DAS, NC
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (10) : 1888 - 1890
  • [2] Modelling of gate-induced drain leakage in relation to technological parameters and temperature
    Bouhdada, A
    Bakkali, S
    Touhami, A
    [J]. MICROELECTRONICS AND RELIABILITY, 1997, 37 (04): : 649 - 652
  • [3] Temperature and drain voltage dependence of gate-induced drain leakage
    Lopez, L
    Masson, P
    Née, D
    Bouchakour, R
    [J]. MICROELECTRONIC ENGINEERING, 2004, 72 (1-4) : 101 - 105
  • [4] Gate-Induced Drain Leakage in Negative Capacitance FinFETs
    Gaidhane, Amol D.
    Pahwa, Girish
    Verma, Amit
    Chauhan, Yogesh Singh
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 67 (03) : 802 - 809
  • [5] Insight Into Gate-Induced Drain Leakage in Silicon Nanowire Transistors
    Fan, Jiewen
    Li, Ming
    Xu, Xiaoyan
    Yang, Yuancheng
    Xuan, Haoran
    Huang, Ru
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015, 62 (01) : 213 - 219
  • [6] Gate-induced drain leakage current enhanced by plasma charging damage
    Ma, SG
    Zhang, YH
    Li, MF
    Li, WD
    Xie, J
    Sheng, GTT
    Yen, AC
    Wang, JLF
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (05) : 1006 - 1008
  • [7] A Novel Charge Pumping Technique With Gate-Induced Drain Leakage Current
    Lee, Geon-Beom
    Kim, Jeong-Yeon
    Choi, Yang-Kyu
    [J]. IEEE ELECTRON DEVICE LETTERS, 2023, 44 (05) : 709 - 712
  • [8] Analysis of gate-induced drain leakage in gate-all-around nanowire transistors
    Sun, Yabin
    Tang, Yaxin
    Li, Xiaojin
    Shi, Yanling
    Wang, Teng
    Xu, Jun
    Liu, Ziyu
    [J]. JOURNAL OF COMPUTATIONAL ELECTRONICS, 2020, 19 (04) : 1463 - 1470
  • [9] Analysis of gate-induced drain leakage in gate-all-around nanowire transistors
    Yabin Sun
    Yaxin Tang
    Xiaojin Li
    Yanling Shi
    Teng Wang
    Jun Xu
    Ziyu Liu
    [J]. Journal of Computational Electronics, 2020, 19 : 1463 - 1470
  • [10] Gate-induced drain leakage in FD-SOI devices: What the TFET teaches us about the MOSFET
    Wan, J.
    Le Royer, C.
    Zaslavsky, A.
    Cristoloveanu, S.
    [J]. MICROELECTRONIC ENGINEERING, 2011, 88 (07) : 1301 - 1304
12345