Design of a Q-Band Single-Balanced Passive Mixer in 0.15μm GaN Technology

被引：2

作者：

Weerathunge, Nethini ^{[1
]}

Chakraborty, Sudipta ^{[1
]}

Mahon, Simon J. ^{[1
]}

McCulloch, Gerry ^{[1
]}

Jones, Andrew ^{[1
]}

Heimlich, Michael ^{[1
]}

机构：

[1] Macquarie Univ, Sch Engn, Sydney, NSW, Australia

来源：

2021 IEEE ASIA-PACIFIC MICROWAVE CONFERENCE (APMC) | 2021年

关键词：

Single-balanced passive mixer; gallium nitride (GaN); high electron mobility transistor (HEMT);

D O I：

10.1109/APMC52720.2021.9661807

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The design and characterization of a Q-band passive single-balanced mixer in 0.15 mu m GaN/SiC HEMT process is presented. The proposed mixer architecture with diplex filters operates both as a frequency up-converter and a down-converter. The measured down and up-conversion losses are better than 103 dB and 11.2 dB respectively from 32 GHz-50 GHz for a moderate LO power level of 15 dBm. The measured LO-RF port isolation is higher than 38 dB across the frequency band. The input-referred 1dB compression point is at 8.5 dBm for IF=1 GHz at LO power level of 15 dBm.

引用

页码：232 / 234

页数：3

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