Design of a Q-Band Single-Balanced Passive Mixer in 0.15μm GaN Technology

被引：2
|
作者：
Weerathunge, Nethini [1 ]
Chakraborty, Sudipta [1 ]
Mahon, Simon J. [1 ]
McCulloch, Gerry [1 ]
Jones, Andrew [1 ]
Heimlich, Michael [1 ]
机构：
[1] Macquarie Univ, Sch Engn, Sydney, NSW, Australia
来源：
2021 IEEE ASIA-PACIFIC MICROWAVE CONFERENCE (APMC) | 2021年
关键词：
Single-balanced passive mixer; gallium nitride (GaN); high electron mobility transistor (HEMT);
D O I：
10.1109/APMC52720.2021.9661807
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The design and characterization of a Q-band passive single-balanced mixer in 0.15 mu m GaN/SiC HEMT process is presented. The proposed mixer architecture with diplex filters operates both as a frequency up-converter and a down-converter. The measured down and up-conversion losses are better than 103 dB and 11.2 dB respectively from 32 GHz-50 GHz for a moderate LO power level of 15 dBm. The measured LO-RF port isolation is higher than 38 dB across the frequency band. The input-referred 1dB compression point is at 8.5 dBm for IF=1 GHz at LO power level of 15 dBm.
引用
收藏
页码：232 / 234
页数：3
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