Radiation and photochemistry of onium salt acid generators in chemically amplified resists

被引：149
|
作者：
Tagawa, S [1 ]
Nagahara, S [1 ]
Iwamoto, T [1 ]
Wakita, M [1 ]
Kozawa, T [1 ]
机构：
[1] Osaka Univ, ISIR, Ibaraki, Osaka 5670047, Japan
来源：
ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XVII, PTS 1 AND 2 | 2000年 / 3999卷
关键词：
sulfonium salt; acid generator; radiation chemistry; photochemistry; in-cage reaction; flash photolysis; pulse radiolysis;
D O I：
10.1117/12.388304
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The difference in photochemistry and radiation chemistry of sulfoniun salt acid generator was investigated by product analysis and time resolved spectroscopic methods for chemically amplified resist application After KrF excimer laser and electron beam irradiation of sulfonium salt yields of decomposed products including acid were determined. The ultra fast in-cage reactions after laser irradiation were directly observed by the femtosecond laser flash photolysis method. Intermediates after electron beam irradiation were observed by nanosecond electron beam pulse radiolysis. From both the product analysis and time resolved spectroscopic methods, the contribution of each reaction pathway to acid generation was determined.
引用
下载
收藏
页码：204 / 213
页数：4
相关论文
共 50 条
  • [31] CHEMICALLY AMPLIFIED RESISTS - A LITHOGRAPHIC COMPARISON OF ACID GENERATING SPECIES
    NEENAN, TX
    HOULIHAN, FM
    REICHMANIS, E
    KOMETANI, JM
    BACHMAN, BJ
    THOMPSON, LF
    ADVANCES IN RESIST TECHNOLOGY AND PROCESSING VI, 1989, 1086 : 2 - 10
  • [32] INFLUENCE OF ACID DIFFUSION ON THE LITHOGRAPHIC PERFORMANCE OF CHEMICALLY AMPLIFIED RESISTS
    NAKAMURA, J
    BAN, H
    TANAKA, A
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1992, 31 (12B): : 4294 - 4300
  • [33] Effects of acid generator anions on radiation-induced decomposition and dissolution kinetics of chemically amplified resists
    Tsuda, Yoshika
    Muroya, Yusa
    Kozawa, Takahiro
    Ikeda, Takuya
    Komuro, Yoshitaka
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2024, 63 (08)
  • [34] Diffusion and resolution for chemically amplified resists
    Mack, Chris A.
    MICROLITHOGRAPHY WORLD, 2006, 15 (03): : 17 - 18
  • [35] Chemically amplified resists: chemistry and processes
    Reichmanis, E.
    Houlihan, F.M.
    Nalamasu, O.
    Neenan, T.X.
    Advanced Materials for Optics and Electronics, 1994, 4 (02): : 83 - 93
  • [36] Functional imaging with chemically amplified resists
    Vekselman, AM
    Zhang, CH
    Darling, GD
    MICROELECTRONICS TECHNOLOGY: POLYMERS FOR ADVANCED IMAGING AND PACKAGING, 1995, 614 : 149 - 165
  • [37] Form of deprotection in chemically amplified resists
    Jones, RL
    Hu, TJ
    Prabhu, VM
    Soles, CL
    Lin, EK
    Wu, WL
    Goldfarb, DL
    Angelopoulos, M
    CHARACTERIZATION AND METROLOGY FOR ULSI TECHNOLOGY, 2003, 683 : 429 - 433
  • [38] THE DEVELOPMENT OF DUV CHEMICALLY AMPLIFIED RESISTS
    THACKERAY, JW
    FEDYNYSHYN, TH
    SMALL, RD
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1993, 205 : 43 - PMSE
  • [39] Electron dynamics in chemically amplified resists
    Kozawa, T
    Yamamoto, H
    Nakano, A
    Saeki, A
    Okamoto, K
    Tagawa, S
    JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY, 2004, 17 (03) : 449 - 452
  • [40] Mechanistic studies of chemically amplified resists
    Hinsberg, W
    Wallraff, G
    Houle, F
    Morrison, M
    Frommer, J
    Beyers, R
    Hutchinson, J
    ORGANIC THIN FILMS: STRUCTURE AND APPLICATIONS, 1998, 695 : 344 - 359
12345