Annihilation of nonradiative recombination centers in GaAs/AlGaAs multiquantum well structures as a result of exposure to plasma

被引：3
|
作者：
Zhuravlev, KS [1 ]
Kolosanov, VA
Marahovka, II
Holland, M
机构：
[1] Russian Acad Sci, Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia
[2] Univ Glasgow, Dept Elect & Elect Engn, Glasgow G12 8QQ, Lanark, Scotland
来源：
SEMICONDUCTORS | 1997年 / 31卷 / 12期
关键词：
D O I：
10.1134/1.1187303
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The effect of exposure to a low-energy plasma (CF4, Ar, Kr)on the photoluminescence properties of GaAs/AlGaAs multiquantum well structures is examined. It is shown that the photoluminescence of the quantum wells in the surface region is quenched after plasma exposure and the depth of this region increases with increase of exposure time. The photoluminescence intensity from the quantum wells located beyond this region increases. We associate these changes in the photoluminescence intensity with the effect of plasma-induced nonequilibrium point defects diffusing with anomalous rapidity into the depth of the structure. (C) 1997 American Institute of Physics. [S1063-7826(97)00612-1].
引用
收藏
页码：1241 / 1243
页数：3
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