Design of Room Temperature Electrically Pumped Visible Semiconductor Nanolasers

被引：9

作者：

Fan, Yuanlong ^{[1
]}

Shore, K. Alan ^{[1
]}

机构：

[1] Bangor Univ, Sch Elect Engn, Bangor LL57 1UT, Gwynedd, Wales

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 2018年 / 54卷 / 05期

基金：

英国工程与自然科学研究理事会;

关键词：

Semiconductor nanolasers; photonic integrated circuits; gallium nitride; LIGHT-EMITTING-DIODES; ENHANCED SPONTANEOUS EMISSION; LOW-THRESHOLD; THERMAL-CONDUCTIVITY; HEAT-CAPACITY; LASERS; SILICON; GAN; CAVITY; MODE;

D O I：

10.1109/JQE.2018.2869332

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a comprehensive theoretical study of the optical and thermal properties of an electrically pumped semiconductor nanolaser (SNL) having an GaN(InGaN/GaN MQWs)/GaN core shell structure. Numerical results show that the lasing whispering-gallery mode has a threshold gain of 413 cm(-1). Furthermore, it is shown that when it is operated well-above threshold, the device temperature increases by only 22 K above an ambient temperature of 300 K. These promising results are attributed to the strong mode confinement in the active region and the good thermal properties of the material system of the proposed structure. The results presented in this paper offer guidelines for fabrication of electrically pumped room temperature continuous wave SNL operating in the visible spectral region.

引用

页数：7

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