Incorporation of quantum corrections to semiclassical two-dimensional device modeling with the Wigner-Boltzmann equation

被引：6
|
作者：
Han, ZY [1 ]
Goldsman, N [1 ]
Lin, CK [1 ]
机构：
[1] Univ Maryland, Dept Elect Engn, College Pk, MD 20742 USA
来源：
SOLID-STATE ELECTRONICS | 2005年 / 49卷 / 02期
关键词：
D O I：
10.1016/j.sse.2004.08.017
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new method for accounting for quantum effects in semiclassical device simulation is presented. The approach is based on the solution to the Wigner-Boltzmann equation, which is derived from the Schrodinger equation. The Wigner-Boltzmann equation is truncated to order h(2), and then formulated using spherical harmonics. This facilitates analytical evaluation of the collision integral, and allows for reduction of dimensionality. The Wigner-Boltzmann equation is solved self-consistently with the Poisson and hole-current continuity equations for a BJT and a MOSFET. The results show that the carrier concentrations predicted by the Wigner-Boltzmann equation near the base-emitter junction and the MOSFET channel are less than that predicted by the semiclassical Boltzmann model. Calculations show terminal currents to be 2% and 7% lower for the quantum simulations than the semiclassical results for the BJT and MOSFET, respectively. (C) 2004 Published by Elsevier Ltd.
引用
收藏
页码：145 / 154
页数：10
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