On the Vth controllability for 4-terminal double-gate MOSFETs

被引：2
|
作者：
Masahara, A [1 ]
Liu, YX [1 ]
Sakamoto, K [1 ]
Endo, K [1 ]
Ishii, K [1 ]
Matsukawa, T [1 ]
Hosokawa, S [1 ]
Sekigawa, T [1 ]
Tanoue, H [1 ]
Yamauchi, H [1 ]
Kanemaru, S [1 ]
Suzuki, E [1 ]
机构：
[1] AIST, Nanoelect Res Inst, Tsukuba, Ibaraki 3058568, Japan
来源：
2004 IEEE INTERNATIONAL SOI CONFERENCE, PROCEEDINGS | 2004年
关键词：
D O I：
10.1109/SOI.2004.1391573
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
引用
收藏
页码：100 / 101
页数：2
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