On the Vth controllability for 4-terminal double-gate MOSFETs

被引：2

作者：

Masahara, A ^{[1
]}

Liu, YX ^{[1
]}

Sakamoto, K ^{[1
]}

Endo, K ^{[1
]}

Ishii, K ^{[1
]}

Matsukawa, T ^{[1
]}

Hosokawa, S ^{[1
]}

Sekigawa, T ^{[1
]}

Tanoue, H ^{[1
]}

Yamauchi, H ^{[1
]}

Kanemaru, S ^{[1
]}

Suzuki, E ^{[1
]}

机构：

[1] AIST, Nanoelect Res Inst, Tsukuba, Ibaraki 3058568, Japan

来源：

2004 IEEE INTERNATIONAL SOI CONFERENCE, PROCEEDINGS | 2004年

关键词：

D O I：

10.1109/SOI.2004.1391573

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：100 / 101

页数：2

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