Characterization of high-Tc ramp-type Josephson junctions constructed with a Nd2CuO4 barrier

被引：3
|
作者：
Gao, J [1 ]
So, SM [1 ]
Wang, ZH [1 ]
机构：
[1] Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
来源：
SUPERCONDUCTOR SCIENCE & TECHNOLOGY | 2002年 / 15卷 / 12期
关键词：
D O I：
10.1088/0953-2048/15/12/310
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
High-T-c ramp-type Josephson junctions were fabricated using a Nd2CuO4 barrier. Such a Nd2CuO4 material has excellent structural, thermal and chemical compatibility with YBa2Cu3O7-delta. Its very stable 214-T' structure, superior electric properties and closed lattice matching make it desirable to construct multilayer junctions. The growth and nature of the heteroepitaxial Nd2CuO4/YBa2Cu3O7-delta structures were investigated by using x-ray diffraction, small angle x-ray reflection, rocking curve, electron microscopy and surface scan measurements. Junctions with a Nd2CuO4 barrier display typical resistively shunted junction-like I-V characteristics with reasonable IcRn products. The large normal resistance, absence of the potential barrier at the SN boundary and a high transparency for the quasi-particles show the advantages of the Nd2CuO4 barrier. The temperature dependence of Josephson parameters and the transport process were studied and discussed.
引用
收藏
页码：1685 / 1688
页数：4
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