InGaAs/GaAs quantum dot lasers

被引:0
|
作者
Bimberg, D [1 ]
Kirstaedter, N [1 ]
Ledentsov, NN [1 ]
Alferov, ZI [1 ]
Kop'ev, PS [1 ]
Ustinov, VM [1 ]
Zaitsev, SV [1 ]
Maximov, MV [1 ]
机构
[1] Tech Univ Berlin, D-10623 Berlin, Germany
关键词
D O I
暂无
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:315 / 330
页数:16
相关论文
共 50 条
  • [21] Low frequency chirp self-assembled InGaAs/GaAs quantum dot lasers
    Hatori, N
    Sugawara, M
    Akiyama, T
    Nakata, Y
    LEOS 2001: 14TH ANNUAL MEETING OF THE IEEE LASERS & ELECTRO-OPTICS SOCIETY, VOLS 1 AND 2, PROCEEDINGS, 2001, : 271 - 272
  • [22] GaAs-based 1.3 µm InGaAs quantum dot lasers: A status report
    M. V. Maximov
    N. N. Ledentsov
    V. M. Ustinov
    Zh. I. Alferov
    D. Bimberg
    Journal of Electronic Materials, 2000, 29 : 476 - 486
  • [23] InGaAs/GaAs quantum dot with material mixing
    Filikhin, I.
    Suslov, V. M.
    Vlahovic, B.
    NSTI NANOTECH 2008, VOL 1, TECHNICAL PROCEEDINGS: MATERIALS, FABRICATION, PARTICLES, AND CHARACTERIZATION, 2008, : 608 - +
  • [24] InAs/GaAs quantum dot lasers
    Schmidt, OG
    Kirstaedter, N
    Ledentsov, NN
    Bimberg, D
    Ustinov, VM
    Egorov, AY
    Zhukov, AE
    Maximov, MV
    Kopev, PS
    Alferov, ZI
    1996 EIGHTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, 1996, : 727 - 730
  • [25] Evidence for reduced thermal conductivity in quantum dot active region from chirp characteristics in InGaAs/GaAs quantum dot lasers
    Tan, H
    Kamath, K
    Bhattacharya, P
    Klotzkin, D
    2004 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2, 2004, : 619 - 620
  • [26] Recombination in InGaAs/GaAs quantum wire lasers
    DeVittorio, M
    Rinaldi, R
    Passaseo, A
    DeGiorgi, M
    Lomascolo, M
    Visconti, P
    Cingolani, R
    Taurino, A
    Catalano, M
    DeCaro, L
    Tapfer, L
    SOLID STATE COMMUNICATIONS, 1999, 112 (01) : 55 - 60
  • [27] Analysis of the reduced thermal conductivity in InGaAs/GaAs quantum dot lasers from chirp characteristics
    Tan, Hua
    Kamath, Kishore K.
    Mi, Zetian
    Bhattacharya, Pallab
    Klotzkin, David
    APPLIED PHYSICS LETTERS, 2006, 89 (12)
  • [28] 1100 nm InGaAs/(Al) GaAs quantum dot lasers for high-power applications
    Pavelescu, E-M
    Gilfert, C.
    Weinmann, P.
    Danila, M.
    Dinescu, A.
    Jacob, M.
    Kamp, M.
    Reithmaier, J-P
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 44 (14)
  • [29] Longitudinal mode grouping in InGaAs/GaAs/AlGaAs quantum dot lasers: Origin and means of control
    O'Reilly, EP
    Onischenko, AI
    Avrutin, EA
    Bhattacharyya, D
    Marsh, JH
    ELECTRONICS LETTERS, 1998, 34 (21) : 2035 - 2037
  • [30] 1.5 micron InAs quantum dot lasers based on metamorphic InGaAs/GaAs heterostructures.
    Ustinov, VM
    Zhukov, AE
    Kovsh, AR
    Maleev, NA
    Mikhrin, SS
    Vasil'ev, AP
    Nikitina, EV
    Semenova, ES
    Kryzhanovskaya, NV
    Musikhin, YG
    Shernyakov, YM
    Maximov, MV
    Ledentsov, NN
    Bimberg, D
    Alferov, ZI
    SELF-ORGANIZED PROCESSES IN SEMICONDUCTOR HETEROEPITAXY, 2004, 794 : 189 - 194