Fabrication and characterization of the size-controlled and patterned nc-Si dots

被引：0
|
作者：
Li, J
Wang, L
Huang, XF
Jiang, M
Li, W
Wang, ZY
Xu, J
Liu, ZG
Chen, KJ [1 ]
机构：
[1] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China
[2] Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China
来源：
CHINESE PHYSICS | 2000年 / 9卷 / 07期
关键词：
nanocrystalline silicon; constrained crystallisation; laser-induced crystallization; sandwiched structure;
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
A new method of phase-modulated excimer laser crystallization is adopted to fabricate the patterned nanometer-sized crystalline silicon (nc-Si) dots within the sandwiched structure (a-SiNx:H/a-Si:H/a-SiNx:H) films. The results of transmission electron microscopy, electron diffraction and Raman scattering show the ultra-thin and single-layer nc-Si films were patterned in the lateral direction and the size of crystallites is controlled by the thickness of as-deposited a-Si film in the longitudinal direction. The effects of the laser energy density on the structures of the samples and the crystallization mechanism are discussed.
引用
收藏
页码：537 / 540
页数：4
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