X-ray K-absorption spectra of phosphorus and sulfur in InPS4:: experiment and theory

被引：3
|
作者：
Lavrentyev, AA
Gabrelian, BV
Dubeiko, VA
Nikiforov, IY
Rehr, JJ
机构：
[1] Univ Washington, Dept Phys, Seattle, WA 98195 USA
[2] Don State Tech Univ, Dept Phys, Rostov On Don, Russia
来源：
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 2000年 / 61卷 / 12期
关键词：
XANES;
D O I：
10.1016/S0022-3697(00)00086-X
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
The K-edge X-ray absorption near edge spectra (XANES) of P and S in InPS4 semiconductors is investigated both experimentally and theoretically. Theoretical calculations carried out using high order multiple scattering theory with the ab initio FEFF7 code are found to be in good agreement with experiment. The notable correspondence between the XANES features for P and S absorbers allows one to interpret the spectra in terms of strongly mixed free S and P p-states. (C) 2000 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：2061 / 2063
页数：3
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