Demonstration of first 1050 V, 21.7 mΩ cm2 normally-off 4H-SiC junction field-effect transistor with implanted vertical channel

被引：4
|
作者：
Zhao, JH
Alexandrov, P
Fursin, L
Weiner, M
机构：
[1] Rutgers State Univ, Dept ECE, Piscataway, NJ 08854 USA
[2] United Silicon Carbide Inc, New Brunswick, NJ 08901 USA
来源：
ELECTRONICS LETTERS | 2003年 / 39卷 / 01期
关键词：
D O I：
10.1049/el:20030104
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The first demonstration of a normally-off 4H-SiC double-gated, vertical junction field-effect transistor (VJFET) with implanted vertical channel without using epitaxial regrowth is reported. With an 11 mum, 1 x 10(16) cm(-3) doped drift layer, over 1000 V VJFETs in the normally-off mode have been fabricated with a specific on-resistance of 21.7 mOmega cm(2).
引用
收藏
页码：151 / 152
页数：2
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