A 2.25kV,6.1mΩ-cm2 4H-SiC Normally-Off VJFET

被引：0
|
作者：
Khan, A. [1 ]
Imran, A. [1 ]
Hasan, M. [1 ]
机构：
[1] Aligarh Muslim Univ, Dept Elect Engn, Aligarh 202002, UP, India
来源：
2012 2ND INTERNATIONAL CONFERENCE ON POWER, CONTROL AND EMBEDDED SYSTEMS (ICPCES 2012) | 2012年
关键词：
Normally-off; VJFET; SiC; Channel; Breakdown voltage; Mobility;
D O I：
暂无
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
VJFET is the device commercially available and further research is going on. In this paper a SiC based power VJFET with low specific on resistance and high breakdown voltage is demonstrated. A low specific on resistance of 6.1m Omega-cm(2) is achieved for a blocking voltage of 2250V by varying its device parameters like channel opening, drift region doping, drift length and the source-drain doping. VJFET demonstrated here do have high baliga's figure of merit calculated as V-bl(2)/Ron-sp = 827 MW/cm(2). These simulations are performed on Synopsys TCAD tool.
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页数：4
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