Improvements in the Device Performance of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors by XeCl Excimer Laser Irradiation

被引：0
|
作者：
Ahn, Byung Du [1 ]
Shin, Hyun Soo [1 ]
Jeong, Woong Hee [1 ]
Kim, Gun Hee [1 ]
Kim, Hyun Jae [1 ]
Choi, Sung-Hwan [2 ]
Han, Min-Koo [2 ]
机构：
[1] Yonsei Univ, Sch Elect & Elect Engn, Seoul 120749, South Korea
[2] Seoul Natl Univ, Sch Elect Engn & Comp Sci, Seoul 151742, South Korea
来源：
2009 SID INTERNATIONAL SYMPOSIUM DIGEST OF TECHNICAL PAPERS, VOL XL, BOOKS I - III | 2009年
关键词：
FABRICATION;
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effect of XeCl excimer laser irradiation on amorphous indium gallium zinc oxide (a-IGZO) thin films was investigated. The resistivity of the a-IGZO thin films dramatically decreased upon their exposure to the XeCl excimer laser compared to that of the as-deposited thin film from 10(4) to 10(-3) Omega cm. The source/drain regions were selectively laser irradiated in the a-IGZO channel layer using metal mask for reducing a contact resistance. Our TFT had afield-effect mobility of 21.79 cm(2)/Vs, an on/off ratio of 6.0 x 10(7), a threshold voltage of -0.15 V, and a subthreshold swing of 0.26 V/decade.
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页码：1170 / +
页数：2
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