Improvements in the Device Performance of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors by XeCl Excimer Laser Irradiation

被引：0

作者：

Ahn, Byung Du ^{[1
]}

Shin, Hyun Soo ^{[1
]}

Jeong, Woong Hee ^{[1
]}

Kim, Gun Hee ^{[1
]}

Kim, Hyun Jae ^{[1
]}

Choi, Sung-Hwan ^{[2
]}

Han, Min-Koo ^{[2
]}

机构：

[1] Yonsei Univ, Sch Elect & Elect Engn, Seoul 120749, South Korea

[2] Seoul Natl Univ, Sch Elect Engn & Comp Sci, Seoul 151742, South Korea

来源：

2009 SID INTERNATIONAL SYMPOSIUM DIGEST OF TECHNICAL PAPERS, VOL XL, BOOKS I - III | 2009年

关键词：

FABRICATION;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of XeCl excimer laser irradiation on amorphous indium gallium zinc oxide (a-IGZO) thin films was investigated. The resistivity of the a-IGZO thin films dramatically decreased upon their exposure to the XeCl excimer laser compared to that of the as-deposited thin film from 10(4) to 10(-3) Omega cm. The source/drain regions were selectively laser irradiated in the a-IGZO channel layer using metal mask for reducing a contact resistance. Our TFT had afield-effect mobility of 21.79 cm(2)/Vs, an on/off ratio of 6.0 x 10(7), a threshold voltage of -0.15 V, and a subthreshold swing of 0.26 V/decade.

引用

页码：1170 / +

页数：2

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