Effects of a nearby Mn delta layer on the optical properties of an InGaAs/GaAs quantum well

被引:6
|
作者
Balanta, M. A. G. [1 ]
Brasil, M. J. S. P. [1 ]
Iikawa, F. [1 ]
Brum, J. A. [1 ]
Mendes, Udson C. [1 ]
Danilov, Yu. A. [2 ]
Dorokhin, M. V. [2 ]
Vikhrova, Olga V. [2 ]
Zvonkov, Boris N. [2 ]
机构
[1] Univ Estadual Campinas, Inst Fis Gleb Wataghin, BR-13083859 Campinas, SP, Brazil
[2] Lobachevsky State Univ Nizhni Novgorod, Physicotech Res Inst, Nizhnii Novgorod 603950, Russia
基金
巴西圣保罗研究基金会; 俄罗斯基础研究基金会;
关键词
EXCITONS; SYSTEMS;
D O I
10.1063/1.4902857
中图分类号
O59 [应用物理学];
学科分类号
摘要
We investigated the effects of nearby Mn ions on the confined states of a InGaAs/GaAs quantum well through circularly polarized and magneto-optical measurements. The addition of a Mn delta-doping layer at the barrier close to the well gives rise to surprisingly narrow absorption peaks in the photoluminescence excitation spectra. The peaks become increasingly stronger for decreasing spacer-layer thicknesses between the quantum well and the Mn layer. Most of the peaks were identified based on self-consistent calculations; however, we observed additional peaks that cannot be identified with quantum well transitions, which origin we attribute to an enhanced exciton-phonon coupling. Finally, we discuss possible effects related to the exciton magneto-polaron complex in the reinforcement of the photoluminescence excitation peaks. (C) 2014 AIP Publishing LLC.
引用
收藏
页数:6
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