A model for the distortion due to switch on-resistance in sample-and-hold circuits

被引:0
|
作者
Centurelli, Francesco [1 ]
Monsurro, Pietro [1 ]
Trifiletti, Alessandro [1 ]
机构
[1] Univ Roma La Sapienza, Dipartimento Ingn Elettron, Via Eudossiana 18, I-00184 Rome, Italy
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中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
A behavioral model of a sample-and-hold circuit is presented, focused on the distortion due to the nonlinear switch On-resistance. A simplified expression for third-order harmonic distortion has been derived, by using a quadratic MOS model where body effect is neglected, and it h as been extended to the case of a transmission gate switch. Both the behavioral model and the distortion estimation have been validated by comparison with Cadence simulations, and very low errors have been obtained over a wide range of circuital and signal parameters.
引用
收藏
页码:4787 / +
页数:2
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