Influences of laser lift-off process on the performances of large-area light-emitting diodes

被引：3
|
作者：
Hu, C. Y. [1 ]
Kang, X. N. [1 ]
Fang, H. [1 ]
Dai, T. [1 ]
Wang, M. J. [1 ]
Qin, Z. X. [1 ]
Chen, Z. Z. [1 ]
Yang, H. [1 ]
Shen, B. [1 ]
Zhang, G. Y. [1 ]
机构：
[1] Peking Univ, Sch Phys, Natl Key Lab Artificial Microstruct & Mesoscop Ph, Res Ctr Wide Gap Semicond, Beijing 100871, Peoples R China
来源：
JOURNAL OF CRYSTAL GROWTH | 2007年 / 298卷 / SPEC. ISS期
基金：
中国国家自然科学基金;
关键词：
gallium compounds; semiconducting III-V materials; light emitting diodes;
D O I：
10.1016/j.jcrysgro.2006.10.128
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Influences of laser lift-off (LLO) process on the performances of large-area light emitting diodes(LALEDs) have been investigated. The current-voltage (I-P), light output power-current (L-I) and electroluminescence (EL) results are presented for the same LALEDs before and after LLO process, respectively. In this way, it was proved that the LLO process had no influence on the I-V profiles and the wavelength of the LALEDs. However, the detachment of the sapphire substrate increased the light output of the LLO-LALEDs. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：719 / 721
页数：3
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