Laser lift-off of AlN/sapphire for UV light-emitting diodes

被引：43
|
作者：
Aoshima, Hiroki [1 ]
Takeda, Kenichiro [1 ]
Takehara, Kosuke [1 ]
Ito, Shun [1 ]
Mori, Mikiko [1 ]
Iwaya, Motoaki [1 ]
Takeuchi, Tetsuya [1 ]
Kamiyama, Satoshi [1 ]
Akasaki, Isamu [1 ,2 ]
Amano, Hiroshi [2 ]
机构：
[1] Meijo Univ, Fac Sci & Technol, Nagoya, Aichi 4688502, Japan
[2] Nagoya Univ, Nagoya, Aichi 4648601, Japan
来源：
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4 | 2012年 / 9卷 / 3-4期
关键词：
UV LED; laser lift-off;
D O I：
10.1002/pssc.201100491
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We report on laser lift-off (LLO) of AlN/sapphire for UV light-emitting diodes (LEDs). Underfill between chip and submount is a key factor for the successful LLO of AlN/ sapphire. We fabricated thin-film-flip-chip UV LEDs with a peak wavelength of 343 nm using the LLO. Moreover surface texturing was carried out on the exfoliated AlN surface. The light output power from the UV LED after the LLO and the surface texture at exfoliated surface is 1.7 times higher than that before the LLO at 20 mA. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：753 / 756
页数：4
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