Effect of hydrogen treatment temperature on the properties of InGaN/GaN multiple quantum wells

被引：22
|
作者：
Zhu, Yadan [1 ,2 ]
Lu, Taiping [1 ,2 ]
Zhou, Xiaorun [1 ,2 ]
Zhao, Guangzhou [1 ,2 ]
Dong, Hailiang [1 ,2 ]
Jia, Zhigang [1 ,2 ]
Liu, Xuguang [1 ,3 ]
Xu, Bingshe [1 ,2 ]
机构：
[1] Taiyuan Univ Technol, Key Lab Interface Sci & Engn Adv Mat, Minist Educ, Taiyuan 030024, Peoples R China
[2] Taiyuan Univ Technol, Res Ctr Adv Mat Sci & Technol, Taiyuan 030024, Peoples R China
[3] Taiyuan Univ Technol, Coll Chem & Chem Engn, Taiyuan 030024, Peoples R China
来源：
NANOSCALE RESEARCH LETTERS | 2017年 / 12卷
基金：
国家重点研发计划; 中国国家自然科学基金;
关键词：
InGaN; Hydrogen; Treatment temperature; Multiple quantum wells; LIGHT-EMITTING-DIODES; BARRIER GROWTH TEMPERATURE; CHEMICAL-VAPOR-DEPOSITION; DEPENDENT PHOTOLUMINESCENCE; MORPHOLOGICAL EVOLUTION; INDIUM SEGREGATION; MULTIQUANTUM WELLS; GAN; EFFICIENCY; GREEN;
D O I：
10.1186/s11671-017-2109-6
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
InGaN/GaN multiple quantum wells (MQWs) were grown with hydrogen treatment at well/barrier upper interface under different temperatures. Hydrogen treatment temperature greatly affects the characteristics of MQWs. Hydrogen treatment conducted at 850 degrees C improves surface and interface qualities of MQWs, as well as significantly enhances room temperature photoluminescence (PL) intensity. In contrast, the sample with hydrogen treatment at 730 degrees C shows no improvement, as compared with the reference sample without hydrogen treatment. On the basis of temperature-dependent PL characteristics analysis, it is concluded that hydrogen treatment at 850 degrees C is more effective in reducing defect-related non-radiative recombination centers in MQWs region, yet has little impact on carrier localization. Hence, hydrogen treatment temperature is crucial to improving the quality of InGaN/GaN MQWs.
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页数：7
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