Time-resolved electroabsorption measurement of carrier velocity in inverted polarity In1-xGaxN/GaN heterostructures due to internal electric fields

被引：4

作者：

Connelly, Blair C. ^{[1
]}

Gallinat, Chad S. ^{[1
]}

Woodward, Nathaniel T. ^{[1
]}

Enck, Ryan W. ^{[1
]}

Metcalfe, Grace D. ^{[1
]}

Tompkins, Randy ^{[1
]}

Jones, Kenneth A. ^{[1
]}

Shen, Hongen ^{[1
]}

Wraback, Michael ^{[1
]}

机构：

[1] US Army Res Lab, Adelphi, MD 20783 USA

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 3-4 | 2014年 / 11卷 / 3-4期

关键词：

In1-xGaxN; carrier velocity; internal electric fields; electroabsorption; N SOLAR-CELLS; STEADY-STATE; GAN; TRANSPORT; POLARIZATION; NITRIDE;

D O I：

10.1002/pssc.201300681

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Carrier transport measurements were made in a c-plane inverted-polarity n-GaN/i-In1-xGaxN/p-GaN heterostructure with a 200-nm thick In1-xGaxN layer using ultrafast spectroscopy techniques. Time-domain THz measurements indicate that the direction of electron transport is dominated by drift towards the n-GaN layer. Time-resolved electroabsorption measurements were used to determine carrier velocities by monitoring the change in transmission of a probe beam tuned to the In1-xGaxN absorption edge due to the transport of photogenerated carriers under the built-in internal electric field. Carrier transit times associated with screening of the electroabsorption are resolved at the lowest injection level. The signal rise time shows two distinct time scales, which correspond to an electron velocity of 3.3 +/- 0.5 x 10(7) cm/s and a hole velocity of 6.7 +/- 0.3 x 10(6) cm/s in an internal electric field of similar to 150 kV/cm. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：682 / 685

页数：4

共 5 条

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