Time-resolved electroabsorption measurement of the electron velocity-field characteristic in GaN

被引：85
|
作者：
Wraback, M [1 ]
Shen, H
Carrano, JC
Li, T
Campbell, JC
Schurman, MJ
Ferguson, IT
机构：
[1] USA, Res Lab, Sensors & Electron Devices Directorate, AMSRL SE EM, Adelphi, MD 20783 USA
[2] US Mil Acad, Photon Res Ctr, Dept Elect Engn & Comp Sci, W Point, NY 10996 USA
[3] Univ Texas, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78712 USA
[4] EMCORE Corp, Somerset, NJ 08873 USA
来源：
APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 09期
关键词：
D O I：
10.1063/1.125968
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A femtosecond optically detected time-of-flight technique that monitors the change in the electroabsorption associated with the transport of photogenerated carriers in a GaN p-i-n diode has been used to determine the room-temperature electron transit time and steady-state velocity as a function of electric field. The peak electron velocity of 1.9 x 10(7) cm/s, corresponding to a transit time of 2.5 ps, is attained at 225 kV/cm. The shape of the velocity-field characteristic is in qualitative agreement with theoretical predictions. (C) 2000 American Institute of Physics. [S0003-6951(00)01009-3].
引用
收藏
页码：1155 / 1157
页数：3
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