Control of magnetization reversal in ferromagnetic semiconductors by electrical means

被引：4

作者：

Chiba, D ^{[1
]}

Yamanouchi, M ^{[1
]}

Matsukura, F ^{[1
]}

Ohno, H ^{[1
]}

机构：

[1] Tohoku Univ, Elect Commun Res Inst, Lab Nanoelect & Spintron, Aoba Ku, Sendai, Miyagi 9808577, Japan

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2004年 / 16卷 / 48期

关键词：

D O I：

10.1088/0953-8984/16/48/029

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A new scheme of magnetization reversal, an electrically assisted magnetization reversal, is realized in a carrier-induced ferromagnetic semiconductor (In, Mn)As structure. The demonstration has been done with field-effect transistors (FETs) having a thin (In, Mn)As channel by the application of a gate electric field to control the hole concentration p.

引用

页码：S5693 / S5696

页数：4

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