Control of magnetization reversal in ferromagnetic semiconductors by electrical means

被引：4
|
作者：
Chiba, D [1 ]
Yamanouchi, M [1 ]
Matsukura, F [1 ]
Ohno, H [1 ]
机构：
[1] Tohoku Univ, Elect Commun Res Inst, Lab Nanoelect & Spintron, Aoba Ku, Sendai, Miyagi 9808577, Japan
来源：
JOURNAL OF PHYSICS-CONDENSED MATTER | 2004年 / 16卷 / 48期
关键词：
D O I：
10.1088/0953-8984/16/48/029
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A new scheme of magnetization reversal, an electrically assisted magnetization reversal, is realized in a carrier-induced ferromagnetic semiconductor (In, Mn)As structure. The demonstration has been done with field-effect transistors (FETs) having a thin (In, Mn)As channel by the application of a gate electric field to control the hole concentration p.
引用
收藏
页码：S5693 / S5696
页数：4
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