Orientation controlling of Pb(Zr0.53Ti0.47)O3 thin films prepared on silicon substrates with the thickness of La0.5Sr0.5CoO3 electrodes

被引：8
|
作者：
Chen, Feng [1 ]
Cheng, Jinrong [1 ]
Yu, Shenwen [1 ]
Meng, Zhongyan [1 ]
机构：
[1] Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China
来源：
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2010年 / 21卷 / 05期
关键词：
FERROELECTRIC PROPERTIES; HETEROSTRUCTURES; DEPOSITION; TEMPERATURE;
D O I：
10.1007/s10854-009-9948-6
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Pb(Zr0.53Ti0.47)O-3 (PZT) thin films were prepared on La0.5Sr0.5CoO3 (LSCO) coated Si substrates by a sol-gel route. The thickness of LSCO electrode was found to modify the preferential orientation of PZT thin films, which consequently affected the dielectric and ferroelectric properties. (100) textured PZT films with dense columnar structure could be obtained on the top of (110) textured LSCO with thickness of 230 nm. PZT thin films prepared on the optimized LSCO films exhibit the enhanced dielectric constant and remnant polarization of 980 and 20 mu C/cm(2), respectively.
引用
收藏
页码：514 / 518
页数：5
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