The application of scanning capacitance microscopy in device failure analysis

被引：0
|
作者：
Lau, YM [1 ]
Lim, VSW [1 ]
Ang, LB [1 ]
Trigg, A [1 ]
机构：
[1] Micron Semicond Asia Pte Ltd, Singapore 339942, Singapore
来源：
IPFA 2004: PROCEEDINGS OF THE 11TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS | 2004年
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, we present the application of scanning capacitance microscopy (SCM) in the failure analysis of 0.11 mum technology devices. The SCM results are compared with chemical staining data, and the limitations of chemical staining are illustrated. Cross-sectional SCM imaging and the advantages and limitations of the SCM technique are discussed.
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页码：99 / 102
页数：4
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