H2 molecules in c-Si after hydrogen plasma treatment

被引：50
|
作者：
Leitch, AWR [1 ]
Alex, V [1 ]
Weber, J [1 ]
机构：
[1] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany
来源：
SOLID STATE COMMUNICATIONS | 1998年 / 105卷 / 04期
关键词：
semiconductors; impurities in semiconductors;
D O I：
10.1016/S0038-1098(97)10107-7
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We report on a Raman spectroscopy study of H-2 molecules in crystalline n- and p-type Si, after treatment in a hydrogen plasma. It is found that the annealing characteristics of the H-2 molecule in Si show similar behaviour to that of the hydrogen-induced platelets formed during plasma treatment. The results strongly suggest that the H-2 molecules are located within the voids created by the platelets. (C) 1997 Elsevier Science Ltd.
引用
收藏
页码：215 / 219
页数：5
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