Characterization of μc-Si:H films prepared by H2 sputtering

被引：0
|
作者：
Tonouchi, Masayoshi [1 ]
Moriyama, Fuminori [1 ]
Miyasato, Tatsuro [1 ]
机构：
[1] Kyushu Inst of Technology, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1990年 / 29卷 / 03期
关键词：
Semiconducting Silicon;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
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页码：385 / 387
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