Mechanism of laser-induced nanomodification on hydrogen-passivated Si(100) surfaces underneath the tip of a scanning tunneling microscope

被引:12
|
作者
Mai, ZH
Lu, YF
Huang, SM
Chim, WK
Pan, JS
机构
[1] Natl Univ Singapore, Dept Elect Engn, Laser Microproc Lab, Singapore 119260, Singapore
[2] Natl Univ Singapore, Data Storage Inst, Singapore 119260, Singapore
[3] Natl Univ Singapore, Inst Mat Res & Engn, Singapore 119260, Singapore
来源
关键词
D O I
10.1116/1.1303815
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Laser-induced nanomodification on hydrogen (H)-passivated Si(100) surfaces has been carried out underneath the tip of a scanning tunneling microscope (STM) in ambient air. The created features were characterized using STM, atomic-force microscopy (AFM), and Auger electron spectroscopy (AES. The features appeared as depressed regions in STM images, while they appeared as protruded regions in AFM images. Oxygen was detected in a modified 2x2 mu m(2) square region by AES, while no oxygen was detected elsewhere on the same sample surface. The experiment results and mechanism are discussed. Nano-oxide patterns, such as lines and dots, have been created. Dependence of oxide apparent depth on laser intensity, laser pulse numbers, tunneling current during modification, and laser incidence angle has been investigated. (C) 2000 American Vacuum Society. [S0734-211X(00)02304-0].
引用
收藏
页码:1853 / 1857
页数:5
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