High Power Density IGBT Module for High Reliability Applications

被引：0
|
作者：
Chamund, D. J. [1 ]
Coulbeck, L. [1 ]
Newcombe, D. R. [1 ]
Waind, P. R. [1 ]
机构：
[1] Dynex Semicond, Lincoln, England
来源：
2009 IEEE 6TH INTERNATIONAL POWER ELECTRONICS AND MOTION CONTROL CONFERENCE, VOLS 1-4 | 2009年
关键词：
IGBT; Fast recovery diode; life estimation; reliability;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The blocking voltage rating of an IGBT module have reached up to 6.5kV, however for true high power application such as traction drives, the current rating has to increase as well. This is mainly achieved by either improving the packing density of semiconductor chips per given module footprint and or improving the current density of the semiconductor chips used in the IGBT module. In this paper we explore how the current ratings of an 800A, 3.3KV module with 140 x 130mm footprint can be improved for a fixed base-line reliability.
引用
收藏
页码：683 / 689
页数：7
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