High Gain Fully On-Chip LNAs with Wideband Input Matching in 0.15-μm GaAs pHEMT for Radio Astronomical Telescope

被引：0

作者：

Chou, Cheng-Feng ^{[1
]}

Chang, Yu-Chuan ^{[1
]}

Wang, Huei ^{[1
]}

Chiong, Chau-Ching ^{[2
]}

机构：

[1] Natl Taiwan Univ, Grad Inst Commun Engn, Taipei 106, Taiwan

[2] Acad Sinica, Inst Astron & Astrophys, Taipei 106, Taiwan

来源：

2015 45TH EUROPEAN MICROWAVE CONFERENCE (EUMC) | 2015年

关键词：

Low noise amplifier; GaAs pHEMT; Square Kilometre Array (SKA); fully on-chip; wideband matching;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents two fully on-chip 0.15-mu m GaAs pHEMT low-noise amplifiers (LNAs) designed in 1.6-3.1 GHz and 2.8-5.2 GHz for Square Kilometre Array (SKA) astronomical application. The LNAs using an additional parallel capacitor at the drain of the first stage achieve wideband input return loss without using a lossy series inductor at the gate of the first stage for input matching. The LNAs designed in 1.6-3.1/2.8-5.2 GHz demonstrate measured vertical bar S-21 vertical bar over 28.7/27.1 dB with vertical bar S-11 vertical bar better than -10/-8 dB and measured noise figure between 0.67-0.85/0.88-1.1 dB in the desired band, respectively.

引用

页码：235 / 238

页数：4